Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-[mu]m cutoff wavelengths

Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-[mu]m cutoff wavelengths

Measurement and analysis of the material transmission characteristics indicate that the small residual inefficiencies may be limited by a parasitic absorption process.

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Veröffentlicht in:IEEE journal of quantum electronics 2005-02, Vol.41 (2), p.227
Hauptverfasser: Lindle, J.R, Bewley, W.W, Vurgaftman, I, Chul Soo Kim, Chul Soo Kim, Meyer, J.R, Johnson, J.L, Thomas, M.L, Piquette, E.C, Tennant, W.E
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Sprache:eng
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Zusammenfassung:Measurement and analysis of the material transmission characteristics indicate that the small residual inefficiencies may be limited by a parasitic absorption process.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2004.839721