GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power
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| Veröffentlicht in: | IEEE photonics technology letters 2006-03, Vol.18 (6), p.758 |
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| container_title | IEEE photonics technology letters |
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| creator | C. Pfahler, C. Pfahler G. Kaufel, G. Kaufel M.T. Kelemen, M.T. Kelemen M. Mikulla, M. Mikulla M. Rattunde, M. Rattunde J. Schmitz, J. Schmitz J. Wagner, J. Wagner |
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| doi_str_mv | 10.1109/LPT.2006.871679 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2006-03, Vol.18 (6), p.758 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_journals_867783646 |
| source | IEEE Electronic Library (IEL) |
| title | GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power |
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