MEMS-tunable vertical-cavity SOAs

We present the signal gain, wavelength tuning characteristics, saturation properties, and noise figure (NF) of MEMS-based widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) for various optical cavity designs, and we compare the theoretical results to data generated from a numbe...

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Veröffentlicht in:IEEE journal of quantum electronics 2005-03, Vol.41 (3), p.390-407
Hauptverfasser: Cole, G.D., Bjorlin, E.S., Qi Chen, Chung-Yeung Chan, Shaomin Wu, Wang, C.S., MacDonald, N.C., Bowers, J.E.
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Sprache:eng
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Zusammenfassung:We present the signal gain, wavelength tuning characteristics, saturation properties, and noise figure (NF) of MEMS-based widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) for various optical cavity designs, and we compare the theoretical results to data generated from a number of experimental devices. Using general Fabry-Pe/spl acute/rot relationships, it is possible to model both the wavelength tuning characteristics and the peak signal gain of tunable vertical-cavity amplifiers, while a rate-equation analysis is used to describe the saturation output power and NF as a function of the VCSOA resonant wavelength. Additionally, the basic design principles for an integrated electrostatic actuator are outlined. It is found that MEMS-tunable VCSOAs follow many of the same design trends as fixed-wavelength devices. However, with tunable devices, the effects of varying mirror reflectance and varying single-pass gain associated with the MEMS-based tuning mechanism lead to changing amplifier properties over the wavelength span of the device.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2004.841496