30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs

This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff fre...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2005-01, Vol.53 (1), p.74-80
Hauptverfasser: Inoue, T., Ando, Y., Miyamoto, H., Nakayama, T., Okamoto, Y., Hataya, K., Kuzuhara, M.
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container_title IEEE transactions on microwave theory and techniques
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creator Inoue, T.
Ando, Y.
Miyamoto, H.
Nakayama, T.
Okamoto, Y.
Hataya, K.
Kuzuhara, M.
description This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.
doi_str_mv 10.1109/TMTT.2004.839333
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An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2004.839333</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlGaN/GaN ; Aluminum gallium nitride ; Aluminum gallium nitrides ; Applied sciences ; Channels ; Cutoff frequency ; Delay ; delay-time analysis ; Electronics ; Exact sciences and technology ; Gain ; Gallium nitride ; Gallium nitrides ; Gates ; heterojunction FET ; Heterojunctions ; Laboratories ; Microwave FETs ; Microwaves ; Noise levels ; Performance gain ; Research and development ; Semiconductor electronics. Microelectronics. Optoelectronics. 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An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.</description><subject>AlGaN/GaN</subject><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>Cutoff frequency</subject><subject>Delay</subject><subject>delay-time analysis</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Gates</subject><subject>heterojunction FET</subject><subject>Heterojunctions</subject><subject>Laboratories</subject><subject>Microwave FETs</subject><subject>Microwaves</subject><subject>Noise levels</subject><subject>Performance gain</subject><subject>Research and development</subject><subject>Semiconductor electronics. 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Solid state devices</subject><subject>short channel</subject><subject>SiC substrate</subject><subject>Silicon carbide</subject><subject>T-shaped gate</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1rGzEQhkVJoE7ae6GXpZDkJGf0LR2DSZxCml4cehTa3Vm8Zr1ypHVK--sj40Cghx6ENKNnXmbmJeQLgzlj4K5XP1arOQeQcyucEOIDmTGlDHXawAmZATBLnbTwkZzlvCmhVGBn5EkAXd7_pXUY2yq-YKoU_VXt4u_y2mHqYtqGscEqdlVexzTRZh3GEYfqZliGx-tyqjVOmOJmPzZTH8fq7naVP5HTLgwZP7_d5-SppBf39OHn8vvi5oE2UrqJsjYIppjmwbbAVJB1zXhgna5bWyvTsrpF0QbrpDYylJZRAjLd8aYVXCklzsnVUXeX4vMe8-S3fW5wGMKIcZ-9dZozI8AV8vK_JDfOAhe8gN_-ATdxn8YyhbelCy0smALBEWpSzDlh53ep34b0xzPwBzv8wQ5_sMMf7SglF2-6ITdh6FJZa5_f63TZiNIH6a9HrkfE929hmTZGvAKMopB5</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Inoue, T.</creator><creator>Ando, Y.</creator><creator>Miyamoto, H.</creator><creator>Nakayama, T.</creator><creator>Okamoto, Y.</creator><creator>Hataya, K.</creator><creator>Kuzuhara, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2004.839333</doi><tpages>7</tpages></addata></record>
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subjects AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Channels
Cutoff frequency
Delay
delay-time analysis
Electronics
Exact sciences and technology
Gain
Gallium nitride
Gallium nitrides
Gates
heterojunction FET
Heterojunctions
Laboratories
Microwave FETs
Microwaves
Noise levels
Performance gain
Research and development
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short channel
SiC substrate
Silicon carbide
T-shaped gate
Transistors
title 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs
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