30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs
This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff fre...
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description | This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m. |
doi_str_mv | 10.1109/TMTT.2004.839333 |
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An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2004.839333</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlGaN/GaN ; Aluminum gallium nitride ; Aluminum gallium nitrides ; Applied sciences ; Channels ; Cutoff frequency ; Delay ; delay-time analysis ; Electronics ; Exact sciences and technology ; Gain ; Gallium nitride ; Gallium nitrides ; Gates ; heterojunction FET ; Heterojunctions ; Laboratories ; Microwave FETs ; Microwaves ; Noise levels ; Performance gain ; Research and development ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; short channel ; SiC substrate ; Silicon carbide ; T-shaped gate ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.74-80</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-1da315162a8d015a4bb12a1f6bd8b57d1bde3da894674a014e40e16f2cd325553</citedby><cites>FETCH-LOGICAL-c449t-1da315162a8d015a4bb12a1f6bd8b57d1bde3da894674a014e40e16f2cd325553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1381677$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,4036,4037,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1381677$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16449567$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Inoue, T.</creatorcontrib><creatorcontrib>Ando, Y.</creatorcontrib><creatorcontrib>Miyamoto, H.</creatorcontrib><creatorcontrib>Nakayama, T.</creatorcontrib><creatorcontrib>Okamoto, Y.</creatorcontrib><creatorcontrib>Hataya, K.</creatorcontrib><creatorcontrib>Kuzuhara, M.</creatorcontrib><title>30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.</description><subject>AlGaN/GaN</subject><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>Cutoff frequency</subject><subject>Delay</subject><subject>delay-time analysis</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Gates</subject><subject>heterojunction FET</subject><subject>Heterojunctions</subject><subject>Laboratories</subject><subject>Microwave FETs</subject><subject>Microwaves</subject><subject>Noise levels</subject><subject>Performance gain</subject><subject>Research and development</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>short channel</subject><subject>SiC substrate</subject><subject>Silicon carbide</subject><subject>T-shaped gate</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1rGzEQhkVJoE7ae6GXpZDkJGf0LR2DSZxCml4cehTa3Vm8Zr1ypHVK--sj40Cghx6ENKNnXmbmJeQLgzlj4K5XP1arOQeQcyucEOIDmTGlDHXawAmZATBLnbTwkZzlvCmhVGBn5EkAXd7_pXUY2yq-YKoU_VXt4u_y2mHqYtqGscEqdlVexzTRZh3GEYfqZliGx-tyqjVOmOJmPzZTH8fq7naVP5HTLgwZP7_d5-SppBf39OHn8vvi5oE2UrqJsjYIppjmwbbAVJB1zXhgna5bWyvTsrpF0QbrpDYylJZRAjLd8aYVXCklzsnVUXeX4vMe8-S3fW5wGMKIcZ-9dZozI8AV8vK_JDfOAhe8gN_-ATdxn8YyhbelCy0smALBEWpSzDlh53ep34b0xzPwBzv8wQ5_sMMf7SglF2-6ITdh6FJZa5_f63TZiNIH6a9HrkfE929hmTZGvAKMopB5</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Inoue, T.</creator><creator>Ando, Y.</creator><creator>Miyamoto, H.</creator><creator>Nakayama, T.</creator><creator>Okamoto, Y.</creator><creator>Hataya, K.</creator><creator>Kuzuhara, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>7QF</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>200501</creationdate><title>30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs</title><author>Inoue, T. ; Ando, Y. ; Miyamoto, H. ; Nakayama, T. ; Okamoto, Y. ; Hataya, K. ; Kuzuhara, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c449t-1da315162a8d015a4bb12a1f6bd8b57d1bde3da894674a014e40e16f2cd325553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>AlGaN/GaN</topic><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Applied sciences</topic><topic>Channels</topic><topic>Cutoff frequency</topic><topic>Delay</topic><topic>delay-time analysis</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Gates</topic><topic>heterojunction FET</topic><topic>Heterojunctions</topic><topic>Laboratories</topic><topic>Microwave FETs</topic><topic>Microwaves</topic><topic>Noise levels</topic><topic>Performance gain</topic><topic>Research and development</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>short channel</topic><topic>SiC substrate</topic><topic>Silicon carbide</topic><topic>T-shaped gate</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Inoue, T.</creatorcontrib><creatorcontrib>Ando, Y.</creatorcontrib><creatorcontrib>Miyamoto, H.</creatorcontrib><creatorcontrib>Nakayama, T.</creatorcontrib><creatorcontrib>Okamoto, Y.</creatorcontrib><creatorcontrib>Hataya, K.</creatorcontrib><creatorcontrib>Kuzuhara, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Inoue, T.</au><au>Ando, Y.</au><au>Miyamoto, H.</au><au>Nakayama, T.</au><au>Okamoto, Y.</au><au>Hataya, K.</au><au>Kuzuhara, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2005-01</date><risdate>2005</risdate><volume>53</volume><issue>1</issue><spage>74</spage><epage>80</epage><pages>74-80</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2004.839333</doi><tpages>7</tpages></addata></record> |
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subjects | AlGaN/GaN Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Channels Cutoff frequency Delay delay-time analysis Electronics Exact sciences and technology Gain Gallium nitride Gallium nitrides Gates heterojunction FET Heterojunctions Laboratories Microwave FETs Microwaves Noise levels Performance gain Research and development Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices short channel SiC substrate Silicon carbide T-shaped gate Transistors |
title | 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs |
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