1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency
Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was de...
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| Veröffentlicht in: | IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2724-2726 |
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| container_title | IEEE transactions on magnetics |
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| creator | Yoda, H. Kai, T. Inaba, T. Iwata, Y. Shimomura, N. Ikegawa, S. Tsuchida, K. Asao, Y. Kishi, T. Ueda, T. Takahashi, S. Nagamine, M. Kajiyama, T. Yoshikawa, M. Amano, M. Nagase, T. Hosotani, K. Nakayama, M. Shimizu, Y. Aikawa, H. Nishiyama, K. Kitagawa, E. Takizawa, R. Ueda, Y. Iwayama, M. Itagaki, K. |
| description | Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated |
| doi_str_mv | 10.1109/TMAG.2006.880081 |
| format | Article |
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First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2006.880081</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Arrays ; Circuit simulation ; CMOS ; CMOS technology ; Cross sections ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Low voltage ; Magnetic tunnel junction (MTJ) ; Magnetic tunneling ; Magnetism ; Magnetoresistive random access memory ; magnetoresistive random access memory (MRAM) ; Materials science ; Other topics in materials science ; Physics ; Planes ; Power supplies ; Programming ; Random access memory ; Research and development ; Shape ; Switches ; Wire ; Wires</subject><ispartof>IEEE transactions on magnetics, 2006-10, Vol.42 (10), p.2724-2726</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2006.880081</doi><tpages>3</tpages></addata></record> |
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| subjects | Arrays Circuit simulation CMOS CMOS technology Cross sections Cross-disciplinary physics: materials science rheology Exact sciences and technology Low voltage Magnetic tunnel junction (MTJ) Magnetic tunneling Magnetism Magnetoresistive random access memory magnetoresistive random access memory (MRAM) Materials science Other topics in materials science Physics Planes Power supplies Programming Random access memory Research and development Shape Switches Wire Wires |
| title | 1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency |
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