Depletion-mode TFT made of low-temperature poly-Si

This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-05, Vol.53 (5), p.1260-1262
Hauptverfasser:	Son, Y.D., Kyung Dong Yang, Byung Seong Bae, Jang, J., Munpyo Hong, Sung Jin Kim
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Boron Channels Charge carrier mobility Depletion Depletion-mode thin-film transistor (TFT) Drains Electric potential Electronics Exact sciences and technology FETs Gates polycrystalline silicon thin-film transistor (poly-Si TFT) Semiconductor device doping Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Thin film transistors Transistors Voltage
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Beschreibung
Zusammenfassung:	This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm/sup 2//V/spl middot/s, a threshold voltage of 18 V, an on/of current ratio of 10/sup 6/, and a gate voltage swing of 1.1 V/dec.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2006.872359