110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-03, Vol.53 (3), p.545-552 |
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| container_end_page | 552 |
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| container_issue | 3 |
| container_start_page | 545 |
| container_title | IEEE transactions on electron devices |
| container_volume | 53 |
| creator | KHAM, M. N EL MUBAREK, H. A. W BONAR, J. M ASHBURN, Peter WARD, P FIORE, L PETRALIA, R ALEMANNI, C MESSINA, A |
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| doi_str_mv | 10.1109/TED.2005.864368 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.545-552 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_865166494 |
| source | IEEE/IET Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | 110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression |
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