Modeling of anomalous frequency and bias dependences of effective gate resistance in RF CMOS

This paper explains the frequency and bias dependences of the effective gate resistance (real part of h 11 ) by considering the effect of the gate-to-body capacitance, gate-to-source/drain overlap capacitances, fringing capacitances, and nonquasi-static (NQS) effect. A new method of separating the physical gate resistance and the NQS channel resistance is proposed. Separating the gate-to-source parasitic capacitances from the gate-to-source inversion capacitance is found to be necessary for an accurate modeling of all the Y-parameters