A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region

A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2006-09, Vol.53 (9), p.2008-2016
Hauptverfasser:	Jin He, Chan, M., Xing Zhang, Yangyuan Wang
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytic solution Applied sciences Circuits compact modeling Devices Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Exact solutions Mathematical analysis Mathematical models MOSFETs Platforms Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simplification surface potential Theoretical study. Circuits analysis and design Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A physics-based analytic solution to the surface potential from the accumulation to the strong-inversion region has been derived from the complete MOSFET surface potential equation in this paper without any need for smooth functions or simplification by dropping some second-order related terms. Its high accuracy in predicting the surface potential and the transcapacitance under various bias conditions has also been verified by a comparison with the numerical results. The explicit surface-potential solution not only leads to a more clear understanding of MOSFET device physics but also provides a better platform to develop the advanced surface potential-based model for the circuit simulation
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2006.880364