The Role of Nitrogen on Charge-Trapping-Induced Vth Instability in HfAlON High-[kappa] Gate Dielectric With Metal and Poly-Si Gate Electrodes

The Role of Nitrogen on Charge-Trapping-Induced Vth Instability in HfAlON High-[kappa] Gate Dielectric With Metal and Poly-Si Gate Electrodes

A similar trend of the N effects was observed in both TaN and poly-Si devices in terms of equivalent oxide thickness, gate leakage current, threshold voltage (V th), transconductance, and subthreshold swing.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2007-08, Vol.54 (8), p.1972
Hauptverfasser: Xiongfei Yu, Xiongfei Yu, Mingbin Yu, Mingbin Yu, Chunxiang Zhu, Chunxiang Zhu
Format: Artikel
Sprache:eng
Schlagworte:
Microprocessors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A similar trend of the N effects was observed in both TaN and poly-Si devices in terms of equivalent oxide thickness, gate leakage current, threshold voltage (V th), transconductance, and subthreshold swing.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.901348