Highly Polarized Single-Chip ELED Sources Using Oppositely Strained MQW Emitters and Absorbers

Integrated polarizer components with polarization extinctions 40 dB are desirable for state-of-the-art photonic integrated circuits. We demonstrate 60-dB polarization extinction from a single-chip InGaAsP-InP broadband source by combining an edge light-emitting diode consisting of compressively strained quantum wells (QWs) with an absorber consisting of tensile strained QWs. A 600-m polarizer exhibits only 5 dB of insertion loss.