Impact of Shear Strain and Quantum Confinement on (110) Channel nMOSFET With High-Stress CESL
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| Veröffentlicht in: | IEEE transactions on electron devices 2008-10, Vol.55 (10), p.2632-2640 |
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| container_issue | 10 |
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| container_title | IEEE transactions on electron devices |
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| creator | TAKASHINO, Hiroyuki OKAGAKI, Takeshi INOUE, Yasuo UCHIDA, Tetsuya HAYASHI, Takashi TANIZAWA, Motoaki TSUKUDA, Eiji EIKYU, Katsumi WAKAHARA, Shoji ISHIKAWA, Kiyoshi TSUCHIYA, Osamu |
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| doi_str_mv | 10.1109/TED.2008.2003094 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2632-2640 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_862623668 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Impact of Shear Strain and Quantum Confinement on (110) Channel nMOSFET With High-Stress CESL |
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