A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

A PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are mo...

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Veröffentlicht in:IEEE transactions on electron devices 2008-07, Vol.55 (7), p.1776-1781
Hauptverfasser: Meixner, R.M., Gobel, H.H., Haidi Qiu, Ucurum, C., Klix, W., Stenzel, R., Yildirim, F.A., Bauhofer, W., Krautschneider, W.H.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Compact model
Computer simulation
Devices
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Mathematical analysis
Mathematical models
MOSFETs
organic thin-film transistors (OFETs)
poly(3-hexylthiophene) (P3HT)
Power electronics, power supplies
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE
Transistors
Voltage
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Beschreibung
Zusammenfassung:A PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.925339