A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs
A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components un...
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| Veröffentlicht in: | IEEE transactions on electron devices 2008-04, Vol.55 (4), p.1035-1041 |
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| container_title | IEEE transactions on electron devices |
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| creator | Seong Dong Kim Narasimha, S. Rim, K. |
| description | A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics. |
| doi_str_mv | 10.1109/TED.2008.917548 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_862539483</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4470149</ieee_id><sourcerecordid>34439760</sourcerecordid><originalsourceid>FETCH-LOGICAL-c413t-16493221ea381b2a65553c725d7e033d959862422745149d34d5eab9d8008e6b3</originalsourceid><addsrcrecordid>eNqFkc1vEzEQxS0EEqFw5sDFQoKeNvX32scoCQUpbSVazpazOwuuNvZiO0X893iVqgcOcLI885unmfcQekvJklJiLu62myUjRC8NbaXQz9CCStk2Rgn1HC0IoboxXPOX6FXO9_WrhGAL9LDC1_ALX0H5EXtcIt5AgXTwAfB2GKAr_gHwztWaG_EmTj58x6t9Ok4lQM7YhR7fTglcXxvNV8g-Fxc6wOt4mGKAUDL2AV-7EHPnRsBXN7eftnf5NXoxuDHDm8f3DH2r5fXnZndz-WW92jWdoLw0dUnDGaPguKZ75pSUknctk30LhPPeSKMVE4y1QlJhei56CW5vel2NALXnZ-j8pDul-PMIudiDzx2MowsQj9kawhU3LSP_JXUriZwdreTHf5JciCqpZsn3f4H38ZhCvdfWrSU3QvMKXZygLsWcEwx2Sv7g0m9LiZ2DtTVYOwdrT8HWiQ-Psm72dEjVcJ-fxhhhVCgz7_nuxHkAeGoL0ZJqFf8DCs6o9w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862539483</pqid></control><display><type>article</type><title>A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Seong Dong Kim ; Narasimha, S. ; Rim, K.</creator><creatorcontrib>Seong Dong Kim ; Narasimha, S. ; Rim, K.</creatorcontrib><description>A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2008.917548</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Devices ; Doping ; Doping profiles ; Drains ; Electronics ; Exact sciences and technology ; Junctions ; Lateral doping abruptness ; Molecular electronics, nanoelectronics ; MOSFETs ; Nanocomposites ; Nanomaterials ; Nanostructure ; on-resistance ; overlap capacitance ; Resistance ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor process modeling ; series resistance ; Spreading ; spreading resistance ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1035-1041</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-16493221ea381b2a65553c725d7e033d959862422745149d34d5eab9d8008e6b3</citedby><cites>FETCH-LOGICAL-c413t-16493221ea381b2a65553c725d7e033d959862422745149d34d5eab9d8008e6b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4470149$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4470149$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20214697$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Seong Dong Kim</creatorcontrib><creatorcontrib>Narasimha, S.</creatorcontrib><creatorcontrib>Rim, K.</creatorcontrib><title>A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Devices</subject><subject>Doping</subject><subject>Doping profiles</subject><subject>Drains</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Junctions</subject><subject>Lateral doping abruptness</subject><subject>Molecular electronics, nanoelectronics</subject><subject>MOSFETs</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>on-resistance</subject><subject>overlap capacitance</subject><subject>Resistance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor process modeling</subject><subject>series resistance</subject><subject>Spreading</subject><subject>spreading resistance</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc1vEzEQxS0EEqFw5sDFQoKeNvX32scoCQUpbSVazpazOwuuNvZiO0X893iVqgcOcLI885unmfcQekvJklJiLu62myUjRC8NbaXQz9CCStk2Rgn1HC0IoboxXPOX6FXO9_WrhGAL9LDC1_ALX0H5EXtcIt5AgXTwAfB2GKAr_gHwztWaG_EmTj58x6t9Ok4lQM7YhR7fTglcXxvNV8g-Fxc6wOt4mGKAUDL2AV-7EHPnRsBXN7eftnf5NXoxuDHDm8f3DH2r5fXnZndz-WW92jWdoLw0dUnDGaPguKZ75pSUknctk30LhPPeSKMVE4y1QlJhei56CW5vel2NALXnZ-j8pDul-PMIudiDzx2MowsQj9kawhU3LSP_JXUriZwdreTHf5JciCqpZsn3f4H38ZhCvdfWrSU3QvMKXZygLsWcEwx2Sv7g0m9LiZ2DtTVYOwdrT8HWiQ-Psm72dEjVcJ-fxhhhVCgz7_nuxHkAeGoL0ZJqFf8DCs6o9w</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Seong Dong Kim</creator><creator>Narasimha, S.</creator><creator>Rim, K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080401</creationdate><title>A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs</title><author>Seong Dong Kim ; Narasimha, S. ; Rim, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-16493221ea381b2a65553c725d7e033d959862422745149d34d5eab9d8008e6b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Devices</topic><topic>Doping</topic><topic>Doping profiles</topic><topic>Drains</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Junctions</topic><topic>Lateral doping abruptness</topic><topic>Molecular electronics, nanoelectronics</topic><topic>MOSFETs</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>on-resistance</topic><topic>overlap capacitance</topic><topic>Resistance</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor process modeling</topic><topic>series resistance</topic><topic>Spreading</topic><topic>spreading resistance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seong Dong Kim</creatorcontrib><creatorcontrib>Narasimha, S.</creatorcontrib><creatorcontrib>Rim, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Seong Dong Kim</au><au>Narasimha, S.</au><au>Rim, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2008-04-01</date><risdate>2008</risdate><volume>55</volume><issue>4</issue><spage>1035</spage><epage>1041</epage><pages>1035-1041</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2008.917548</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1035-1041 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance Devices Doping Doping profiles Drains Electronics Exact sciences and technology Junctions Lateral doping abruptness Molecular electronics, nanoelectronics MOSFETs Nanocomposites Nanomaterials Nanostructure on-resistance overlap capacitance Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling series resistance Spreading spreading resistance Transistors |
| title | A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T14%3A50%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20New%20Method%20to%20Determine%20Effective%20Lateral%20Doping%20Abruptness%20and%20Spreading-Resistance%20Components%20in%20Nanoscale%20MOSFETs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Seong%20Dong%20Kim&rft.date=2008-04-01&rft.volume=55&rft.issue=4&rft.spage=1035&rft.epage=1041&rft.pages=1035-1041&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2008.917548&rft_dat=%3Cproquest_RIE%3E34439760%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=862539483&rft_id=info:pmid/&rft_ieee_id=4470149&rfr_iscdi=true |