A New Method to Determine Effective Lateral Doping Abruptness and Spreading-Resistance Components in Nanoscale MOSFETs

A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components un...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-04, Vol.55 (4), p.1035-1041
Hauptverfasser:	Seong Dong Kim, Narasimha, S., Rim, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Devices Doping Doping profiles Drains Electronics Exact sciences and technology Junctions Lateral doping abruptness Molecular electronics, nanoelectronics MOSFETs Nanocomposites Nanomaterials Nanostructure on-resistance overlap capacitance Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling series resistance Spreading spreading resistance Transistors
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Beschreibung
Zusammenfassung:	A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance and overlap capacitance response measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2008.917548