High-Work-Function Ir/HfLaO -MOSFETs Using Low-Temperature-Processed Shallow Junction

We report a high effective work function (Phi m-eff ) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase diffusion using SiO 2 -covered Ga or Ni/Ga. At 1.2-nm effective oxide thickness, good Phi m-eff of 5.3 eV, low V t of +0.05 V, high mobility of 90 cm 2 /V-s at -0.3 MV/cm, and small 85degC negative bias-temperature instability (NBTI) of 20 mV (10 MV/cm for 1 h) are measured for Ir/HfLaO p-MOSFETs.