A New Method for RTS Noise of Semiconductor Devices Identification

A New Method for RTS Noise of Semiconductor Devices Identification

In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns...

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Veröffentlicht in:IEEE transactions on instrumentation and measurement 2008-06, Vol.57 (6), p.1199-1206
Hauptverfasser: Konczakowska, A., Cichosz, J., Szewczyk, A.
Format: Artikel
Sprache:eng
Schlagworte:
Block diagrams
Frequency domain analysis
Gaussian noise
Instrumentation
Low-frequency noise
Noise
Noise generators
Noise level
Noise measurement
Noise scattering pattern method (NSP method)
random telegraph signal (RTS) noise
Scattering
Semiconductor device noise
Semiconductor devices
Telegraphy
White noise
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Beschreibung
Zusammenfassung:In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are included.
ISSN:0018-9456
1557-9662
DOI:10.1109/TIM.2007.915098