Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films
Different nitrogen sources, pure ..., pure NO, and NO mixed with ... (25% NO + 75% ...), are used to confirm the effects of N+, ..., and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of...
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| Veröffentlicht in: | IEEE transactions on plasma science 2011-02, Vol.39 (2), p.711 |
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| creator | Li, Zebin Liang, Rongqing Ou, Qiongrong Zhang, Shuyu He, Long Chang, Xijiang Wu, Xiaojing Wu, Zhonghang He, Zhijiang Gao, Huanzhong |
| description | Different nitrogen sources, pure ..., pure NO, and NO mixed with ... (25% NO + 75% ...), are used to confirm the effects of N+, ..., and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of ..., NO, and NO mixed with ..., the major implanted ions are, respectively, ... ions, ... mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, ..., and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [...], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with ..., while others still remain n-type conductivity. The mechanism of p-type conversion by ..., NO, and NO mixed ... PIII was investigated in this paper. (ProQuest: ... denotes formulae/symbols omitted.) |
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| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_858943953</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2304769691</sourcerecordid><originalsourceid>FETCH-proquest_journals_8589439533</originalsourceid><addsrcrecordid>eNqNi80KgkAcxJcoyD7e4U9XW1hdl9xuIUle8uKlDoqCgqK7trsGvX0r9AAdhhlmfrNAjscpx5ye2BI5hHCKaejRNdpo3RHiBYz4DnpEUhjVVpNppdAgG7i7R6tcTxX4uY2pC4kUkAxjXwpTzhwYCSPOPmMN9v6ulZ5L-32K9HzpIW77Qe_Qqil7Xe9_vkWH-JpFNzwq-ZpqbYpOTkrYqQhZyAPKGaV_QV_-m0CL</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>858943953</pqid></control><display><type>article</type><title>Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films</title><source>IEEE Electronic Library (IEL)</source><creator>Li, Zebin ; Liang, Rongqing ; Ou, Qiongrong ; Zhang, Shuyu ; He, Long ; Chang, Xijiang ; Wu, Xiaojing ; Wu, Zhonghang ; He, Zhijiang ; Gao, Huanzhong</creator><creatorcontrib>Li, Zebin ; Liang, Rongqing ; Ou, Qiongrong ; Zhang, Shuyu ; He, Long ; Chang, Xijiang ; Wu, Xiaojing ; Wu, Zhonghang ; He, Zhijiang ; Gao, Huanzhong</creatorcontrib><description>Different nitrogen sources, pure ..., pure NO, and NO mixed with ... (25% NO + 75% ...), are used to confirm the effects of N+, ..., and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of ..., NO, and NO mixed with ..., the major implanted ions are, respectively, ... ions, ... mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, ..., and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [...], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with ..., while others still remain n-type conductivity. The mechanism of p-type conversion by ..., NO, and NO mixed ... PIII was investigated in this paper. (ProQuest: ... denotes formulae/symbols omitted.)</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Conductivity ; Ions ; Nitric oxide ; Plasma ; Spectrum analysis ; Thin films ; Zinc oxides</subject><ispartof>IEEE transactions on plasma science, 2011-02, Vol.39 (2), p.711</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Feb 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Li, Zebin</creatorcontrib><creatorcontrib>Liang, Rongqing</creatorcontrib><creatorcontrib>Ou, Qiongrong</creatorcontrib><creatorcontrib>Zhang, Shuyu</creatorcontrib><creatorcontrib>He, Long</creatorcontrib><creatorcontrib>Chang, Xijiang</creatorcontrib><creatorcontrib>Wu, Xiaojing</creatorcontrib><creatorcontrib>Wu, Zhonghang</creatorcontrib><creatorcontrib>He, Zhijiang</creatorcontrib><creatorcontrib>Gao, Huanzhong</creatorcontrib><title>Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films</title><title>IEEE transactions on plasma science</title><description>Different nitrogen sources, pure ..., pure NO, and NO mixed with ... (25% NO + 75% ...), are used to confirm the effects of N+, ..., and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of ..., NO, and NO mixed with ..., the major implanted ions are, respectively, ... ions, ... mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, ..., and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [...], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with ..., while others still remain n-type conductivity. The mechanism of p-type conversion by ..., NO, and NO mixed ... PIII was investigated in this paper. (ProQuest: ... denotes formulae/symbols omitted.)</description><subject>Conductivity</subject><subject>Ions</subject><subject>Nitric oxide</subject><subject>Plasma</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><subject>Zinc oxides</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNi80KgkAcxJcoyD7e4U9XW1hdl9xuIUle8uKlDoqCgqK7trsGvX0r9AAdhhlmfrNAjscpx5ye2BI5hHCKaejRNdpo3RHiBYz4DnpEUhjVVpNppdAgG7i7R6tcTxX4uY2pC4kUkAxjXwpTzhwYCSPOPmMN9v6ulZ5L-32K9HzpIW77Qe_Qqil7Xe9_vkWH-JpFNzwq-ZpqbYpOTkrYqQhZyAPKGaV_QV_-m0CL</recordid><startdate>20110201</startdate><enddate>20110201</enddate><creator>Li, Zebin</creator><creator>Liang, Rongqing</creator><creator>Ou, Qiongrong</creator><creator>Zhang, Shuyu</creator><creator>He, Long</creator><creator>Chang, Xijiang</creator><creator>Wu, Xiaojing</creator><creator>Wu, Zhonghang</creator><creator>He, Zhijiang</creator><creator>Gao, Huanzhong</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110201</creationdate><title>Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films</title><author>Li, Zebin ; Liang, Rongqing ; Ou, Qiongrong ; Zhang, Shuyu ; He, Long ; Chang, Xijiang ; Wu, Xiaojing ; Wu, Zhonghang ; He, Zhijiang ; Gao, Huanzhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_8589439533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Conductivity</topic><topic>Ions</topic><topic>Nitric oxide</topic><topic>Plasma</topic><topic>Spectrum analysis</topic><topic>Thin films</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Zebin</creatorcontrib><creatorcontrib>Liang, Rongqing</creatorcontrib><creatorcontrib>Ou, Qiongrong</creatorcontrib><creatorcontrib>Zhang, Shuyu</creatorcontrib><creatorcontrib>He, Long</creatorcontrib><creatorcontrib>Chang, Xijiang</creatorcontrib><creatorcontrib>Wu, Xiaojing</creatorcontrib><creatorcontrib>Wu, Zhonghang</creatorcontrib><creatorcontrib>He, Zhijiang</creatorcontrib><creatorcontrib>Gao, Huanzhong</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Zebin</au><au>Liang, Rongqing</au><au>Ou, Qiongrong</au><au>Zhang, Shuyu</au><au>He, Long</au><au>Chang, Xijiang</au><au>Wu, Xiaojing</au><au>Wu, Zhonghang</au><au>He, Zhijiang</au><au>Gao, Huanzhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films</atitle><jtitle>IEEE transactions on plasma science</jtitle><date>2011-02-01</date><risdate>2011</risdate><volume>39</volume><issue>2</issue><spage>711</spage><pages>711-</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>Different nitrogen sources, pure ..., pure NO, and NO mixed with ... (25% NO + 75% ...), are used to confirm the effects of N+, ..., and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of ..., NO, and NO mixed with ..., the major implanted ions are, respectively, ... ions, ... mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, ..., and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [...], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with ..., while others still remain n-type conductivity. The mechanism of p-type conversion by ..., NO, and NO mixed ... PIII was investigated in this paper. (ProQuest: ... denotes formulae/symbols omitted.)</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Conductivity Ions Nitric oxide Plasma Spectrum analysis Thin films Zinc oxides |
| title | Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films |
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