Contributions of N+, N+^sub 2^, NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films

Different nitrogen sources, pure ..., pure NO, and NO mixed with ... (25% NO + 75% ...), are used to confirm the effects of N+, ..., and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of ..., NO, and NO mixed with ..., the major implanted ions are, respectively, ... ions, ... mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, ..., and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [...], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with ..., while others still remain n-type conductivity. The mechanism of p-type conversion by ..., NO, and NO mixed ... PIII was investigated in this paper. (ProQuest: ... denotes formulae/symbols omitted.)