Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Aluminum-doped gadolinium oxides GdAlO x are proposed as a blocking oxide layer in charge-trap-type flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al 2 O 3 blocking layer. The optimization of Al percentage...

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Veröffentlicht in:	IEEE transactions on electron devices 2009-11, Vol.56 (11), p.2739-2745
Hauptverfasser:	Jing Pu, Chan, D.S.H., Sun-Jung Kim, Byung Jin Cho
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum oxide Applied sciences Charge Compound structure devices Data storage Design. Technologies. Operation analysis. Testing Devices Dielectrics Electronics Exact sciences and technology Flash memory Gadolinium oxides hbox{GdAlO}_{x} blocking layer Integrated circuits Integrated circuits by function (including memories and processors) Logic gates Magnetic and optical mass memories Memory devices Oxides polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS) retention Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Temperature Temperature measurement Tunneling
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Beschreibung
Zusammenfassung:	Aluminum-doped gadolinium oxides GdAlO x are proposed as a blocking oxide layer in charge-trap-type flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al 2 O 3 blocking layer. The optimization of Al percentage in GdAlO x , as well as charge loss mechanism in the memory cell device, has also been systematically studied.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2009.2030834