Frequency Response of Source-Gated Transistors

Frequency Response of Source-Gated Transistors

A small-signal equivalent circuit is derived for source-gated transistors. For Schottky source barriers, a particularly simple expression is derived for fT which is confirmed using 2-D modeling.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2009-10, Vol.56 (10), p.2354-2356
Hauptverfasser: Shannon, J.M., Balon, F.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Barriers
Capacitance
Current density
Device modeling
Devices
Electronics
Equivalent circuits
Exact sciences and technology
FETs
field-effect transistor (FET)
Frequency response
Logic gates
Permittivity
Schottky barrier
Schottky barriers
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
source-gated transistor (SGT)
thin-film transistor
Transistors
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Beschreibung
Zusammenfassung:A small-signal equivalent circuit is derived for source-gated transistors. For Schottky source barriers, a particularly simple expression is derived for fT which is confirmed using 2-D modeling.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2028047