Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced [Formula Omitted] Ion-Implantation Technique

Using the Si-I.I. technique, both the anisotropic silicidation to the perpendicular direction and the phase transition from Ni2Si to NiSi are enhanced by the introduction of damaged layers into Si substrates, such as vacancy and amorphous Si layers, and as a result, the silicidation region is confined at the source and drain regions.