Analysis, Optimization, and Design of 2-2.8 [Formula Omitted] Stacked Multiple-Junction PIN GaInAsSb/GaSb Photodetectors for Future O/E Interconnections

The 2-2.8 [Formula Omitted] vertically stacked multiple-junction PIN GaInAsSb/GaSb photodetectors are analyzed, optimized, and designed based on an improved general mode to predict the optimal performance of PIN infrared photodetectors arising from nonequilibrium carrier generation, diffusion, and recombination theory. Optimal thickness of intrinsic absorption region [Formula Omitted], response quantum efficiency ( [Formula Omitted]), detectivity [Formula Omitted], and [Formula Omitted]3-dB cutoff frequency [Formula Omitted] are calculated and optimized for a 2-2.8 [Formula Omitted] room-temperature high-frequency operation. Ways to achieve optimal performance in practice, material, and device structures are proposed. The optimized vertically stacked multiple-junction PIN GaInAsSb/GaSb photodetector structure shows a [Formula Omitted] of [Formula Omitted], an [Formula Omitted] of 52%-69%, and a [Formula Omitted] with [Formula Omitted] and junction number [Formula Omitted], effective illumination area [Formula Omitted], and reverse bias voltage [Formula Omitted]. The proposed general model is validated by simulation and measurement data of fabricated single-junction detectors.