Impact of phosphorus and nitrogen on structure and catalytic performance of VZrPON oxynitrides in the ammoxidation of 3-picoline
The catalytic performance of VZrON and novel P-containing VZrPON oxynitrides is compared in the ammoxidation of 3-picoline. Due to higher VO x dispersion, lower V valence state and a pronounced formation of P N instead of V N bonds VZrPON catalysts are less active but slightly more selective. [Displ...
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Veröffentlicht in: | Journal of catalysis 2011-01, Vol.277 (2), p.196-207 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The catalytic performance of VZrON and novel P-containing VZrPON oxynitrides is compared in the ammoxidation of 3-picoline. Due to higher VO
x
dispersion, lower V valence state and a pronounced formation of P
N instead of V
N bonds VZrPON catalysts are less active but slightly more selective.
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► P incorporation raises V dispersion, forms P
N and suppresses V
N moieties. ► P lowers activity and improves selectivity only slightly. ► 3-CP selectivity rises with rising N surface concentration. ► Impact of N surface sites on selectivity dominates over surface acidity.
Novel P-containing oxynitrides VZrPON were tested besides their VZrPO oxide precursors in the ammoxidation of 3-picoline and compared with P-free VZrON catalysts for analysing the influence of both incorporated P and N on the catalytic performance. Results of XRD, XPS,
31P and
51V MAS NMR as well as of simultaneous in situ-EPR/UV–vis/Raman studies during nitridation have shown that the incorporation of phosphorus enhances the V dispersion, reduces vanadium partially even down to V
3+ and leads to the formation of a crystalline ZrV
2−
x
P
x
O
7 phase for Zr/V
⩾
0.5 with V sites surrounded by four O atoms only. N is preferentially incorporated in the vicinity of P, thus, suppressing the formation of V
N moieties. These facts may be a reason why the incorporation of P does not markedly improve the catalytic performance of VZrPON catalysts. |
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ISSN: | 0021-9517 1090-2694 |
DOI: | 10.1016/j.jcat.2010.11.008 |