Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning
n -Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30 μ m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (...
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Veröffentlicht in: | Journal of electronic materials 2010-10, Vol.39 (10), p.2251-2254 |
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creator | Zhang, Pan Wang, Zhong Chen, Hui Yu, Haijun Zhu, Lei Jian, Xuyu |
description | n
-Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30
μ
m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS). |
doi_str_mv | 10.1007/s11664-010-1314-1 |
format | Article |
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-Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30
μ
m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS).</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-010-1314-1</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Alloys ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: structure, mechanical and thermal properties ; Cooling ; Cross-disciplinary physics: materials science; rheology ; Electronics and Microelectronics ; Exact sciences and technology ; Instrumentation ; Materials research ; Materials Science ; Melt spinning ; Microstructure ; Optical and Electronic Materials ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Physics ; Silicon ; Solid State Physics ; Solidification ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of electronic materials, 2010-10, Vol.39 (10), p.2251-2254</ispartof><rights>TMS 2010</rights><rights>2015 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Oct 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-9262d61f08575fcccc894fee80791d11ef281cd3e4f1a5d2aeced974c483037b3</citedby><cites>FETCH-LOGICAL-c345t-9262d61f08575fcccc894fee80791d11ef281cd3e4f1a5d2aeced974c483037b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-010-1314-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-010-1314-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23383627$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Pan</creatorcontrib><creatorcontrib>Wang, Zhong</creatorcontrib><creatorcontrib>Chen, Hui</creatorcontrib><creatorcontrib>Yu, Haijun</creatorcontrib><creatorcontrib>Zhu, Lei</creatorcontrib><creatorcontrib>Jian, Xuyu</creatorcontrib><title>Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>n
-Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30
μ
m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS).</description><subject>Alloys</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cooling</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Instrumentation</subject><subject>Materials research</subject><subject>Materials Science</subject><subject>Melt spinning</subject><subject>Microstructure</subject><subject>Optical and Electronic Materials</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Physics</subject><subject>Silicon</subject><subject>Solid State Physics</subject><subject>Solidification</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1UE1rGzEQFSWFOm5_QG-i0KMajb529xhM4hQSAokLvS2KduQqrCVXWh82v74yDs0pc5hhmDfvzTxCvgL_AZw3FwXAGMU4cAYSFIMPZAFaSQat-X1GFlwaYFpI_Ymcl_LMOWhoYUFerrxHN9Hk6SqlMcQtfbAT0hTpXXA5lSkf3HTIdqQ3aZe2GDFMM7VxoOtsQ6SP4QWP25Ft5j3Wlq2Rbv5g3iUcK3MOjl6OY5rp00zvcJzo4z7EWIU-k4_ejgW_vNYl-XV9tVndsNv79c_V5S1zUumJdcKIwYDnrW60dzXaTnnEljcdDADoRQtukKg8WD0Iiw6HrlFOtZLL5kkuybcT7z6nvwcsU_-cDjlWyb7RqjNGqK6C4AQ6_lwy-n6fw87muQfeHx3uTw73_NhXh2taku-vxLY4O_psowvl_6KQspVGNBUnTrhSR3GL-e2A98n_AY0si5Q</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Zhang, Pan</creator><creator>Wang, Zhong</creator><creator>Chen, Hui</creator><creator>Yu, Haijun</creator><creator>Zhu, Lei</creator><creator>Jian, Xuyu</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20101001</creationdate><title>Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning</title><author>Zhang, Pan ; Wang, Zhong ; Chen, Hui ; Yu, Haijun ; Zhu, Lei ; Jian, Xuyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-9262d61f08575fcccc894fee80791d11ef281cd3e4f1a5d2aeced974c483037b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Alloys</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cooling</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics and Microelectronics</topic><topic>Exact sciences and technology</topic><topic>Instrumentation</topic><topic>Materials research</topic><topic>Materials Science</topic><topic>Melt spinning</topic><topic>Microstructure</topic><topic>Optical and Electronic Materials</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Physics</topic><topic>Silicon</topic><topic>Solid State Physics</topic><topic>Solidification</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Pan</creatorcontrib><creatorcontrib>Wang, Zhong</creatorcontrib><creatorcontrib>Chen, Hui</creatorcontrib><creatorcontrib>Yu, Haijun</creatorcontrib><creatorcontrib>Zhu, Lei</creatorcontrib><creatorcontrib>Jian, Xuyu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Database (Proquest)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest Research Library</collection><collection>ProQuest Science Journals</collection><collection>ProQuest Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Pan</au><au>Wang, Zhong</au><au>Chen, Hui</au><au>Yu, Haijun</au><au>Zhu, Lei</au><au>Jian, Xuyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2010-10-01</date><risdate>2010</risdate><volume>39</volume><issue>10</issue><spage>2251</spage><epage>2254</epage><pages>2251-2254</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>n
-Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30
μ
m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS).</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-010-1314-1</doi><tpages>4</tpages></addata></record> |
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subjects | Alloys Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cooling Cross-disciplinary physics: materials science rheology Electronics and Microelectronics Exact sciences and technology Instrumentation Materials research Materials Science Melt spinning Microstructure Optical and Electronic Materials Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Silicon Solid State Physics Solidification Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning |
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