Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning

n -Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30  μ m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (...

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Veröffentlicht in:Journal of electronic materials 2010-10, Vol.39 (10), p.2251-2254
Hauptverfasser: Zhang, Pan, Wang, Zhong, Chen, Hui, Yu, Haijun, Zhu, Lei, Jian, Xuyu
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Sprache:eng
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Zusammenfassung:n -Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30  μ m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS).
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-010-1314-1