Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning
n -Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30 μ m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (...
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Veröffentlicht in: | Journal of electronic materials 2010-10, Vol.39 (10), p.2251-2254 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | n
-Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30
μ
m. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS). |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-010-1314-1 |