Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon

Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors. However, the NILC process often leads to Ni and NiSi 2 precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) p...

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Veröffentlicht in:	Journal of electronic materials 2009-06, Vol.38 (6), p.767-771
Hauptverfasser:	Wang, Bau-Ming, Wu, Yewchung Sermon
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Crystallization Efficiency Electronics Electronics and Microelectronics Equations of state, phase equilibria, and phase transitions Exact sciences and technology Instrumentation Materials Materials Science Nickel Optical and Electronic Materials Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Solid State Physics Solid-solid transitions Specific phase transitions Transistors
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Beschreibung
Zusammenfassung:	Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors. However, the NILC process often leads to Ni and NiSi 2 precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped amorphous Si. After annealing at 550°C for 12 h, it was found that phosphorous dopant did improve the gettering efficiency of amorphous Si.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-009-0750-2