Topography and Dislocations in (112)B HgCdTe/CdTe/Si

Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination. A new (112)B CdTe/Si EPD etch has also bee...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2009-08, Vol.38 (8), p.1771-1775
Hauptverfasser:	Benson, J. D., Smith, P. J., Jacobs, R. N., Markunas, J. K., Jaime-Vasquez, M., Almeida, L. A., Stoltz, A., Bubulac, L. O., Groenert, M., Wijewarnasuriya, P. S., Brill, G., Chen, Y., Lee, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Electronics Electronics and Microelectronics Exact sciences and technology Instrumentation Linear defects: dislocations, disclinations Materials Science Mercury cadmium telluride Methods of deposition of films and coatings film growth and epitaxy Microscopy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical and Electronic Materials Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor research Solid State Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination. A new (112)B CdTe/Si EPD etch has also been demonstrated which reduces the surface roughness of the etched epilayer and makes etch pit density determination less problematic.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-009-0758-7