Anti-reflective and luminescent GaAs/AlGaAs core–shell nanowires on Si wafer with 1 ns carrier lifetime up to 400 K
We investigated the structural and optical properties of GaAs/Al0.8Ga0.2As core–shell nanowires (NWs) grown on a 2-in. Si wafer. The NWs exhibit low reflectance (
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| Veröffentlicht in: | Journal of applied physics 2025-01, Vol.137 (3) |
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| container_issue | 3 |
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| container_title | Journal of applied physics |
| container_volume | 137 |
| creator | Minehisa, Keisuke Hashimoto, Hidetoshi Nakama, Kaito Kise, Hiroto Sato, Shino Takayama, Junichi Hiura, Satoshi Murayama, Akihiro Ishikawa, Fumitaro |
| description | We investigated the structural and optical properties of GaAs/Al0.8Ga0.2As core–shell nanowires (NWs) grown on a 2-in. Si wafer. The NWs exhibit low reflectance ( |
| doi_str_mv | 10.1063/5.0244241 |
| format | Article |
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Si wafer. The NWs exhibit low reflectance (<2%) across the visible to near-infrared range, attributed to their complex structure, intrinsic GaAs absorption, and a uniform NW density of approximately 3 × 108 cm−2 with an average length of 5 μm. Optical analyses based on Kubelka–Munk transformation and Tauc plot revealed minimal deviation between the estimated bandgap and the photoluminescence (PL) peak position. Temperature-dependent PL measurements between 300 and 400 K showed a weak intensity reduction and a characteristic temperature of 170 K, indicating stable emission properties within this range. Time-resolved-PL measurements demonstrated carrier lifetimes exceeding 1 ns up to 400 K, with a surface recombination velocity comparable to high-quality GaAs/AlGaAs NWs. These findings provide key insights into the optical performance and thermal stability of the NWs, highlighting their potential for optoelectronic devices operating at elevated temperatures.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0244241</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium arsenides ; Carrier lifetime ; Carrier recombination ; Gallium arsenide ; High temperature ; Infrared analysis ; Nanowires ; Near infrared radiation ; Optical properties ; Optoelectronic devices ; Photoluminescence ; Position measurement ; Temperature dependence ; Thermal stability</subject><ispartof>Journal of applied physics, 2025-01, Vol.137 (3)</ispartof><rights>Author(s)</rights><rights>2025 Author(s). 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Si wafer. The NWs exhibit low reflectance (<2%) across the visible to near-infrared range, attributed to their complex structure, intrinsic GaAs absorption, and a uniform NW density of approximately 3 × 108 cm−2 with an average length of 5 μm. Optical analyses based on Kubelka–Munk transformation and Tauc plot revealed minimal deviation between the estimated bandgap and the photoluminescence (PL) peak position. Temperature-dependent PL measurements between 300 and 400 K showed a weak intensity reduction and a characteristic temperature of 170 K, indicating stable emission properties within this range. Time-resolved-PL measurements demonstrated carrier lifetimes exceeding 1 ns up to 400 K, with a surface recombination velocity comparable to high-quality GaAs/AlGaAs NWs. These findings provide key insights into the optical performance and thermal stability of the NWs, highlighting their potential for optoelectronic devices operating at elevated temperatures.</description><subject>Aluminum gallium arsenides</subject><subject>Carrier lifetime</subject><subject>Carrier recombination</subject><subject>Gallium arsenide</subject><subject>High temperature</subject><subject>Infrared analysis</subject><subject>Nanowires</subject><subject>Near infrared radiation</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Photoluminescence</subject><subject>Position measurement</subject><subject>Temperature dependence</subject><subject>Thermal stability</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2025</creationdate><recordtype>article</recordtype><recordid>eNp90LFOwzAQBmALgUQpDLyBJSaQ0tqOnThjVEFBVGIA5shNzqqr1Cm2Q9WtKzNv2CfBVTsznXT36U73I3RLyYiSLB2LEWGcM07P0IASWSS5EOQcDQhhNJFFXlyiK--XhFAq02KAtqUNJnGgW6iD-QasbIPbfmUs-BpswFNV-nHZHgquOwf73a9fQNtiq2y3MQ487ix-N3ijNDi8MWGB6X73YyNXzpnYa42GYFaA-zUOHeaExPnrNbrQqvVwc6pD9Pn0-DF5TmZv05dJOUtqKllIFC9EUzTNnElGpCQ5MMKzJtPAtdYsz3Mh54I1oAiLTqXx3zrjnM6V5A0v0iG6O-5du-6rBx-qZdc7G09WKRVCMkZTHtX9UdWu8z7mUa2dWSm3rSipDslWojolG-3D0fraBBVMZ__Bf7UvefU</recordid><startdate>20250121</startdate><enddate>20250121</enddate><creator>Minehisa, Keisuke</creator><creator>Hashimoto, Hidetoshi</creator><creator>Nakama, Kaito</creator><creator>Kise, Hiroto</creator><creator>Sato, Shino</creator><creator>Takayama, Junichi</creator><creator>Hiura, Satoshi</creator><creator>Murayama, Akihiro</creator><creator>Ishikawa, Fumitaro</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0003-6879-7159</orcidid><orcidid>https://orcid.org/0000-0002-5632-056X</orcidid><orcidid>https://orcid.org/0009-0001-0644-4433</orcidid><orcidid>https://orcid.org/0009-0000-5713-9773</orcidid><orcidid>https://orcid.org/0000-0001-5140-4070</orcidid><orcidid>https://orcid.org/0000-0002-0710-2777</orcidid><orcidid>https://orcid.org/0000-0001-9800-5069</orcidid><orcidid>https://orcid.org/0009-0004-3301-0085</orcidid></search><sort><creationdate>20250121</creationdate><title>Anti-reflective and luminescent GaAs/AlGaAs core–shell nanowires on Si wafer with 1 ns carrier lifetime up to 400 K</title><author>Minehisa, Keisuke ; 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Si wafer. The NWs exhibit low reflectance (<2%) across the visible to near-infrared range, attributed to their complex structure, intrinsic GaAs absorption, and a uniform NW density of approximately 3 × 108 cm−2 with an average length of 5 μm. Optical analyses based on Kubelka–Munk transformation and Tauc plot revealed minimal deviation between the estimated bandgap and the photoluminescence (PL) peak position. Temperature-dependent PL measurements between 300 and 400 K showed a weak intensity reduction and a characteristic temperature of 170 K, indicating stable emission properties within this range. Time-resolved-PL measurements demonstrated carrier lifetimes exceeding 1 ns up to 400 K, with a surface recombination velocity comparable to high-quality GaAs/AlGaAs NWs. These findings provide key insights into the optical performance and thermal stability of the NWs, highlighting their potential for optoelectronic devices operating at elevated temperatures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0244241</doi><tpages>6</tpages><orcidid>https://orcid.org/0009-0003-6879-7159</orcidid><orcidid>https://orcid.org/0000-0002-5632-056X</orcidid><orcidid>https://orcid.org/0009-0001-0644-4433</orcidid><orcidid>https://orcid.org/0009-0000-5713-9773</orcidid><orcidid>https://orcid.org/0000-0001-5140-4070</orcidid><orcidid>https://orcid.org/0000-0002-0710-2777</orcidid><orcidid>https://orcid.org/0000-0001-9800-5069</orcidid><orcidid>https://orcid.org/0009-0004-3301-0085</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum gallium arsenides Carrier lifetime Carrier recombination Gallium arsenide High temperature Infrared analysis Nanowires Near infrared radiation Optical properties Optoelectronic devices Photoluminescence Position measurement Temperature dependence Thermal stability |
| title | Anti-reflective and luminescent GaAs/AlGaAs core–shell nanowires on Si wafer with 1 ns carrier lifetime up to 400 K |
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