Anti-reflective and luminescent GaAs/AlGaAs core–shell nanowires on Si wafer with 1 ns carrier lifetime up to 400 K

Anti-reflective and luminescent GaAs/AlGaAs core–shell nanowires on Si wafer with 1 ns carrier lifetime up to 400 K

We investigated the structural and optical properties of GaAs/Al0.8Ga0.2As core–shell nanowires (NWs) grown on a 2-in. Si wafer. The NWs exhibit low reflectance (

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Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2025-01, Vol.137 (3)
Hauptverfasser: Minehisa, Keisuke, Hashimoto, Hidetoshi, Nakama, Kaito, Kise, Hiroto, Sato, Shino, Takayama, Junichi, Hiura, Satoshi, Murayama, Akihiro, Ishikawa, Fumitaro
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium arsenides
Carrier lifetime
Carrier recombination
Gallium arsenide
High temperature
Infrared analysis
Nanowires
Near infrared radiation
Optical properties
Optoelectronic devices
Photoluminescence
Position measurement
Temperature dependence
Thermal stability
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Zusammenfassung:We investigated the structural and optical properties of GaAs/Al0.8Ga0.2As core–shell nanowires (NWs) grown on a 2-in. Si wafer. The NWs exhibit low reflectance (
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0244241