Regulated dual defects of ligand defects and lattice defects in UIO-66 for ultra-trace simultaneous detection and removal of heavy metal ions
Exploring multifunctional absorbents for the concurrent detection and elimination of heavy metal ions (HMIs) presents a significant challenge. In this study, dual defective bimetallic metal–organic framework materials (D-D-UIO-66) are synthesized by the solvothermal method. The incorporation of an a...
Gespeichert in:
Veröffentlicht in: | Materials chemistry frontiers 2025-01, Vol.9 (2), p.308-317 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Exploring multifunctional absorbents for the concurrent detection and elimination of heavy metal ions (HMIs) presents a significant challenge. In this study, dual defective bimetallic metal–organic framework materials (D-D-UIO-66) are synthesized by the solvothermal method. The incorporation of an acid and Ce 3+ simultaneously introduces ligand defects and lattice defects, which provides a massive defective synergistic effect to enhance the intrinsic properties of D-D-UIO-66. D-D-UIO-66 can simultaneously detect Pb( ii ), Cd( ii ), Hg( ii ), and Cu( ii ), exhibiting high sensitivities of 15.209, 10.092, 2.829, and 1.347 μA μM −1 , respectively. D-D-UIO-66 also demonstrate excellent stability and anti-interference capabilities, and it has been effectively applied in real water environments. On the other hand, D-D-UIO-66 can remove Pb( ii ) from the water environment and achieve a maximum adsorption of 667.04 mg g −1 . The mechanisms behind the electrochemical detection and adsorption activities of D-D-UIO-66 are explored, which reveal that the synergistic interplay between distinct defects enhances the electronic microstructure, consequently boosting both electrochemical detection and adsorption capabilities. This study presents a strategy for multifunctional adsorbents, advancing the understanding of defect engineering and its influence on the fundamental mechanisms of material behavior. |
---|---|
ISSN: | 2052-1537 2052-1537 |
DOI: | 10.1039/D4QM00920G |