Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures

Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures

Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in F...

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Veröffentlicht in:Applied physics letters 2025-01, Vol.126 (1)
Hauptverfasser: Chen, Hongjing, Xing, Yuntong, Wang, Xia, Wang, Guan, Wu, Jinsong, Zhang, Aoyu, Hao, Qinghua, Cai, Menghao, Chen, Xiaodie, Li, Longde, Chen, Wenzhanhong, Han, Jun-Bo
Format: Artikel
Sprache:eng
Schlagworte:
Antiferromagnetism
Bias
Data storage
Dichroism
Exchanging
Ferromagnetism
Heterojunctions
Heterostructures
Kerr magnetooptical effect
Magnetic properties
Two dimensional materials
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Zusammenfassung:Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in FM/AFM heterojunctions inconvenient. Herein, a Fe3GeTe2/Fe3GaTe2 FM/FM heterojunction is constructed to generate large exchange bias and reflected magnetic circular dichroism and magneto-optical Kerr effect techniques are used for the magnetic characterization of the heterojunction. The results show that strong magnetic coupling occurs at the Fe3GeTe2/Fe3GaTe2 interface when the temperature is
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0235511