High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se): High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se)
In this work, based on first-principles calculations and Boltzmann transport theory, we have investigated the structural, electronic, mechanical, and thermoelectric properties of CdSbS 3 and CdSbSe 3 compounds, which are two novel members of the MAX 3 family. We found that these compounds are semico...
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Veröffentlicht in: | Journal of electronic materials 2025, Vol.54 (1), p.389-402 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work, based on first-principles calculations and Boltzmann transport theory, we have investigated the structural, electronic, mechanical, and thermoelectric properties of
CdSbS
3
and
CdSbSe
3
compounds, which are two novel members of the
MAX
3
family. We found that these compounds are semiconductors with a narrow band gap. In addition, they are both mechanically, dynamically, and thermodynamically stable. The results show that their interlayer distances are wider than almost all transition metal dichalcogenide compounds. Furthermore, we report that the lattice thermal conductivity,
κ
l
, at room temperature for
CdSbS
3
is 0.53 W m
−1
K
−1
and 0.13 W m
−1
K
−1
for
CdSbSe
3
. This latter value is similar to that of
ZnPSe
3
, which was found to be lower than all other 2D materials. More remarkably, the thermoelectric figure of merit of
CdSbS
3
reaches as high as 2.34 at 1400 K and 2.68 for
CdSbSe
3
at 850 K, which is a record high value at this temperature. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-024-11510-1 |