Controlled synthesis of Mn-doped ZnO nanoparticles for low-frequency Di-electric devices

Transition metal oxide (TMOs) nanomaterials have gained remarkable attention due to their vast potential applications. In this study, a controlled facile synthesis route is applied for the preparation of manganese (Mn) doped ZnO nanoparticles (NPs) by varying Mn amount from 2 to 8%. X-ray diffractometry (XRD) analysis confirms a defect-free hexagonal wurtzite crystal structure. Transmission electron microscope (TEM) images reveal an increasing trend in the particle size from ~ 17 to ~ 34 nm with increasing Mn doping concentration. Similarly, UV–Vis spectroscopy shows an increase in the energy band gap from 2.91 to 3.33 eV with dopant concentrations. Electrical measurement confirms an increase in the dielectric constant which makes these materials efficient for low frequency devices.