Analysis of polaron pair lifetime dynamics and secondary processes in exciplex driven TADF OLEDs using organic magnetic field effects

Magnetic field effects (MFEs) in thermally activated delayed fluorescence (TADF) materials have been shown to influence the reverse intersystem crossing (RISC) and to impact on electroluminescence (EL) and conductivity. Here, we present a novel model combining Cole–Cole and Lorentzian functions to d...

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Veröffentlicht in:Scientific reports 2024-12, Vol.14 (1), p.30520-13, Article 30520
Hauptverfasser: Morgenstern, Annika, Weber, Dominik, Hertling, Lukas, Gabel, Konstantin, Schwarz, Ulrich T., Schondelmaier, Daniel, Zahn, Dietrich R. T., Salvan, Georgeta
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Sprache:eng
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Zusammenfassung:Magnetic field effects (MFEs) in thermally activated delayed fluorescence (TADF) materials have been shown to influence the reverse intersystem crossing (RISC) and to impact on electroluminescence (EL) and conductivity. Here, we present a novel model combining Cole–Cole and Lorentzian functions to describe low and high magnetic field effects originating from hyperfine coupling, the g mechanism, and triplet processes. We applied this approach to organic light-emitting devices of third generation based on tris(4-carbazoyl-9-ylphenyl)amine (TCTA) and 2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi), exhibiting blue emission, to unravel their loss mechanisms. The quality of the regression function was evaluated using k-fold cross-validation. The scoring was compared to various alternative fitting functions, which were previously proposed in literature. Density functional theory calculations, photoluminescence, and electroluminescence studies validated the formation of a TADF exciplex system. Furthermore, we propose successful encapsulation using a semi-permeable polymer, showing promising results for magnetic field sensing applications on arbitrary geometry. This study provides insights into the origin of magnetic field effects in exciplex-TADF materials, with potential applications in optoelectronic devices and sensing technologies.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-024-82060-z