Exploring the potential of FinFET transistor technology in reconfigurable logic gates for enhanced computing performance

Advanced logic gates and transistor technologies play a crucial role in the design of high-speed computing systems. In this paper, a novel 3-dimensional fin-shaped reconfigurable transistor is presented, which exhibits identical behavior in both n-enhancement mode and p-enhancement mode operations....

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Veröffentlicht in:Journal of the Korean Physical Society 2024-11, Vol.85 (12), p.1032-1040
Hauptverfasser: Heydari, Hamid Reza, Ahangari, Zahra, Nematian, Hamed, Kafoori, Kian Ebrahim
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Sprache:eng
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Zusammenfassung:Advanced logic gates and transistor technologies play a crucial role in the design of high-speed computing systems. In this paper, a novel 3-dimensional fin-shaped reconfigurable transistor is presented, which exhibits identical behavior in both n-enhancement mode and p-enhancement mode operations. The key highlight of this reconfigurable transistor lies in its ability to integrate XNOR, NOT, and AND gates within a single device. Unlike conventional reconfigurable transistors, the proposed device incorporates a dual-doped n + /p + source and a Schottky drain region. Notably, this device only requires a control gate, while the drain electrode serves the dual purpose of being the output and program gate. The findings demonstrate remarkable performance characteristics for the n-enhancement mode and p-enhancement mode operations. Specifically, the on-state current is measured to be 3.68 µA and 2.85 µA, with corresponding on/off current ratios of 11.25 × 10 8 and 1.23 × 10 8 , respectively. Moreover, the device achieves a subthreshold swing of 61 mV/dec and 63 mV/dec for the n-enhancement mode and p-enhancement mode, respectively. This innovative design highlights the potential of utilizing a single FinFET reconfigurable transistor to design complex logic gates, demonstrating a significant advancement in integrated circuit technology towards enhanced efficiency and versatility.
ISSN:0374-4884
1976-8524
DOI:10.1007/s40042-024-01213-5