Effect of tunnelling in double barrier nitride (AlGaN/GaN) heterojunction

In a double-barrier heterostructure made of (AlGaN/GaN), the tunneling effect has been investigated, and the probability that electrons will pass through the barrier has been determined. As the temperature fluctuates, the likelihood of tunneling changes. Here, tunneling has been measured at a very low temperature. The heterostructure has demonstrated the possible distribution. The tunneling current for an AlGaN/GaN heterostructure with a double barrier of nitride has been tracked. The work proposes a model of trap-assisted tunneling that can quantitatively assess the impact of traps on the total current flowing through a heterostructure made of GaN, AlGaN, and GaN. The basis of the model is the expression of the occupation probability of the electron trapping centers in terms of thermal and tunneling exchange periods. (Kneissl M et al. in Nature Photonics 13: 233, 2019) The investigation focused on examining the tunneling effect within a double-barrier (AlGaN/GaN) heterostructure. The research aimed to determine the likelihood of electrons tunneling through the barriers, and this tunneling probability was assessed in the context of temperature variations. Specifically, the study conducted measurements of tunneling probability at an exceptionally low temperature of 77 K. The findings indicate that the probability of tunneling is temperature-dependent, with a particular emphasis on the conditions prevalent at very low temperatures.