Effects of Postdeposition Annealing on the Electrical Properties of Cu2O/4H–SiC PiN Diodes

Effects of Postdeposition Annealing on the Electrical Properties of Cu2O/4H–SiC PiN Diodes

Copper oxide (Cu2O) is a promising p‐type material owing to its high absorption coefficient, suitable bandgap width, chemical stability, nontoxicity, and abundance. In this study, the effect of postdeposition annealing (PDA) on the electrical properties of Cu2O thin films deposited on silicon carbid...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2024-12, Vol.221 (23), p.n/a
Hauptverfasser: Lee, Hyung‐Jin, Lee, Geon‐Hee, Lee, Hyun‐Woo, Lee, Tae‐Hee, Kim, Il Ryong, Kim, Min Kyu, Lim, Byeong Cheol, Koo, Sang‐Mo
Format: Artikel
Sprache:eng
Schlagworte:
Absorptivity
Annealing
Copper oxides
Electrical properties
Oxidation
PIN diodes
postdeposition annealings
radio‐frequency sputterings
Silicon carbide
silicon carbides
Silicon substrates
Thin films
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Copper oxide (Cu2O) is a promising p‐type material owing to its high absorption coefficient, suitable bandgap width, chemical stability, nontoxicity, and abundance. In this study, the effect of postdeposition annealing (PDA) on the electrical properties of Cu2O thin films deposited on silicon carbide (SiC) substrates is investigated. The films are subjected to PDA using radio‐frequency sputtering at various temperatures in air. During PDA, the Cu2O films are maintained at
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202400018