1200-V Trench-FS IGBT: Process-Based Modeling and Short-Circuit Safe Operating Area (SCSOA) Optimization With the TOPSIS Method

Power electronics are widely used in new energy vehicles, photovoltaics, and other fields. Its robustness has been concerned, and short-circuit robustness is an essential part of it, which is worth in-depth research. In this work, a 1200-V Trench-field-stop (FS) insulated-gate bipolar transistor (IG...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-01, Vol.71 (12), p.7716-7726
Hauptverfasser:	Chang, Yifei, Wang, Jiaxuan, Guan, Hao, Liu, Pan
Format:	Artikel
Sprache:	eng
Schlagworte:	1200-V insulated-gate bipolar transistor (IGBT) Analytical models Capacitance Electron microscopes failure mechanisms Failure modes Insulated gate bipolar transistors Integrated circuit modeling Logic gates Modelling Multiple criterion Optimization Photovoltaic cells Robustness Robustness (mathematics) Scanning electron microscopy Semiconductor devices short circuit Short circuits short-circuit safe operating area (SCSOA) optimization Switches TCAD model Technique for Order of Preference by Similarity to Ideal Solution (TOPSIS) Voltage
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