1200-V Trench-FS IGBT: Process-Based Modeling and Short-Circuit Safe Operating Area (SCSOA) Optimization With the TOPSIS Method

Power electronics are widely used in new energy vehicles, photovoltaics, and other fields. Its robustness has been concerned, and short-circuit robustness is an essential part of it, which is worth in-depth research. In this work, a 1200-V Trench-field-stop (FS) insulated-gate bipolar transistor (IGBT) was focused on for its short-circuit safe operating area (SCSOA) capability analysis. First, a model based on the actual process flow was set up, aligned with the scanning electron microscope (SEM) results, with the discrepancy between its static and dynamic electrical characteristics controlled within 5% and 12%, respectively. Subsequently, two primary failure modes and mechanisms of the device under test (DUT) under short-circuit conditions were identified, analyzed through TCAD modeling, and verified through actual short-circuit tests. Finally, the Technique for Order of Preference by Similarity to Ideal Solution (TOPSIS) method for multiple-criteria decision-making (MCDM) was applied to optimize the SCSOA, enhancing the short-circuit robustness of the device by 4% with minimal loss to other electrical performances.