Toward monolithic growth integration of nanowire electronics in 3D architecture: a review

Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent electrostatic control capability, are widely regarded as advantageous channels for the fabrication of high-performance microelectronics, memories, and sensors. For example, the latest Si field-effect-transistor (FET) technolog...

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Veröffentlicht in:	Science China. Information sciences 2023-10, Vol.66 (10), p.200406, Article 200406
Hauptverfasser:	Liang, Lei, Hu, Ruijin, Yu, Linwei
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels CMOS Computer Science Controllability Electronics Etching Field effect transistors Information Systems and Communication Service Low temperature Metal oxides Multilayers Nanowires Review Semiconductor devices Silicon wafers Transistors
Online-Zugang:	Volltext
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