Investigations of ScAlN/AlGaN split barrier inspired high electron mobility transistor

In this article we propose the improved DC performance of Scandium Aluminum Nitride (ScAlN) barrier induced AlGaN/GaN high electron mobility transistor. Normally in a HEMT device, the maximum performance and the device reliability of a GaN HEMT is improved by field plate techniques. In the proposed device, the gate length of 250nm with a field plate of 0.5um is simulated on the Silicon substrate. The implementation of gate field plate along with the spitted barrier layer configuration in the device provides the maximum impact on the drain current of the device. When the device is biased at with drain current of 0.54A/mm. In this proposed structure, the ScAlN layer enhances the RF characteristics of the device where the maximum cutoff frequency is 24% improved than the convention device.