Light Emission Characteristics in Nitride Semiconductor Nanowires Fabricated by Top‐down Method

Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet‐visible light with low‐power consumption and high driving speed. Herein, nanowire structures are fabricated from a light‐emitting diode epitaxial wafer and demonstrates the effectiveness of wet etching in top‐down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified. Emission characteristics from single nitride nanowires with light‐emitting diode structures are investigated. Straight nanowires are formed using trimethylammonium hydroxide in top‐down fabrication. Spontaneous emission from the active layer and lasing from the GaN layer in a single nanowire are observed. The nanowires lase in the TE01 guided mode as shown by 3D simulation.