Silicon radiation detectors with rectifier junction prepared by different technological procedures

We prepared Silicon radiation detectors, detector chip 5×5 mm2, by different technological procedures. Rectifier junction of detectors were fabricated in the form MOS structure (these detectors are well-known in the literature as Si-surface barrier detectors), in the form of p-n junction (these are named as p-n junction type detectors) or in the form of MS structure (it means Schottky barrier junction detectors). Current-voltage characteristic, the capacitance-voltage measurement and measurement of energy resolution with alpha radiation were performed for comparison of prepared detectors. Best values for the energy resolution with alpha source 239Pu+238Pu+244Cm was obtained for Si p-n detectors, Si-surface barrier detectors and PtSi Schottky detectors show slightly worse energetic resolution.