Ultra‐Power‐Efficient, Electrically Programmable, Multi‐State Photonic Flash Memory on a Heterogeneous III‐V/Si Platform

Non‐volatile charge‐trap flash memory (CTM) co‐located with heterogeneous III‐V/Si photonics is demonstrated. The wafer‐bonded III‐V/Si CTM cell facilitates non‐volatile optical functionality for a variety of devices such as Mach–Zehnder Interferometers (MZIs), asymmetric MZI lattice filters, and ring resonator filters. The MZI CTM exhibits full write/erase operation (100 cycles with 500 states) with wavelength shifts of Δλnon‐volatile = 1.16 nm (Δneff,non‐volatile ≈ 2.5 × 10−4) and a dynamic power consumption