Driving the Berry phase anomalous Hall effect in a noncollinear antiferromagnet by domain manipulation

The emergence of anomalous Hall effects (AHE) in antiferromagnets presents an intriguing phenomenon with potential spintronic device applications due to their ultrafast switching dynamics. Mn3NiN antiperovskite stands out as a promising candidate owing to its noncollinear antiferromagnetism. In this study, we report a significant AHE observed in epitaxial Mn3NiN thin films below the Néel temperature, comparable to those observed in typical ferromagnets. Through a combination of magnetometry, neutron diffraction and ab-initio data analyses, we propose that the substantial AHE can be attributed to the non-vanishing Berry curvature arising from the {\Gamma}4g-type spin structure, coupled with uncompensated magnetic domains featuring a weak canted moment. This coupling, due to robust antiferromagnetic domains, enables deterministic detection and switching of AHE via the application of a magnetic field.