Systematic Modeling and Optimization for High‐Efficiency Interdigitated Back‐Contact Crystalline Silicon Solar Cells

This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back‐contact (IBC) crystalline silicon (c‐Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current–voltage (I–V) performance has been scientifically explored for IBC c‐Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front‐ and rear‐surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 μm, a wafer resistivity of 1 Ω cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short‐circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown. This study uses Quokka3 to simulate interdigitated back‐contact (IBC) c‐Si solar cells, examining the impact of geometric and wafer characteristics. Optimal parameters include a 70% emitter percentage, 200 μm thickness, 1 Ω cm resistivity, and 10 ms bulk lifetime. These optimizations achieve up to 26.64% efficiency, significantly enhancing performance, with open‐circuit voltage (Voc) = 737.9 mV, short‐circuit current (Jsc) = 42.06 mA cm−2, and Fill Factor (FF) = 85.85%.