Analytical dVCE/dt Model of High-Power Trench Gate/Field-Stop IGBT Modules Considering Dynamical Conduction Current at Near-ZCT Transient
When high-power trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) modules operate at near-zero current turn-off (near-ZCT), the conventional collector-emitter voltage rise slope ( dV_{\mathrm { CE}}/dt ) model does not consider the extension behavior of the space-charge regio...
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| Veröffentlicht in: | IEEE journal of emerging and selected topics in power electronics 2024-10, Vol.12 (5), p.4993-5003 |
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| container_title | IEEE journal of emerging and selected topics in power electronics |
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| creator | Li, Yue Guo, Xizheng Chen, Yueqing Sun, Zonghui You, Xiaojie |
| description | When high-power trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) modules operate at near-zero current turn-off (near-ZCT), the conventional collector-emitter voltage rise slope ( dV_{\mathrm { CE}}/dt ) model does not consider the extension behavior of the space-charge region (SCR) into the FS layer. In addition, it does not account for the effect of dynamic conduction current (DCC), resulting in poor model generality. To address these issues, this article first derives an expression for the voltage at the turning point where V_{\mathrm { CE}} exhibits a two-stage slope, occurring as the N-base region expands into the FS layer. Furthermore, the boundary conditions for V_{\mathrm { CE}} exhibiting a two-stage slope are determined. Second, based on the proposed expression and boundary conditions, accounting for the effect of DCC on the excess carrier concentration in the N-base region, a segmented analytical model for dV_{\mathrm { CE}}/dt is proposed. Finally, IGBT modules with various technologies and voltage ratings were experimentally tested. The results from simulations and hardware experiments validate the effectiveness and accuracy of the proposed method. |
| doi_str_mv | 10.1109/JESTPE.2024.3444906 |
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In addition, it does not account for the effect of dynamic conduction current (DCC), resulting in poor model generality. To address these issues, this article first derives an expression for the voltage at the turning point where <inline-formula> <tex-math notation="LaTeX">V_{\mathrm { CE}} </tex-math></inline-formula> exhibits a two-stage slope, occurring as the N-base region expands into the FS layer. Furthermore, the boundary conditions for <inline-formula> <tex-math notation="LaTeX">V_{\mathrm { CE}} </tex-math></inline-formula> exhibiting a two-stage slope are determined. Second, based on the proposed expression and boundary conditions, accounting for the effect of DCC on the excess carrier concentration in the N-base region, a segmented analytical model for <inline-formula> <tex-math notation="LaTeX">dV_{\mathrm { CE}}/dt </tex-math></inline-formula> is proposed. Finally, IGBT modules with various technologies and voltage ratings were experimentally tested. The results from simulations and hardware experiments validate the effectiveness and accuracy of the proposed method.]]></description><identifier>ISSN: 2168-6777</identifier><identifier>EISSN: 2168-6785</identifier><identifier>DOI: 10.1109/JESTPE.2024.3444906</identifier><identifier>CODEN: IJESN2</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Analytical models ; Boundary conditions ; Capacitors ; Carrier density ; Collector-emitter voltage rise slope (dVCE/dt) ; dynamic conduction current (DCC) ; Electric potential ; Emitters ; Germanium ; Insulated gate bipolar transistors ; Logic gates ; Modules ; near-zero current turn-off (near-ZCT) ; Semiconductor devices ; space-charge region (SCR) ; Transient analysis ; trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) ; Voltage</subject><ispartof>IEEE journal of emerging and selected topics in power electronics, 2024-10, Vol.12 (5), p.4993-5003</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0009-0008-0454-2268 ; 0009-0007-8042-1540 ; 0000-0001-9403-2641 ; 0000-0002-6365-1682</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10638084$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10638084$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Li, Yue</creatorcontrib><creatorcontrib>Guo, Xizheng</creatorcontrib><creatorcontrib>Chen, Yueqing</creatorcontrib><creatorcontrib>Sun, Zonghui</creatorcontrib><creatorcontrib>You, Xiaojie</creatorcontrib><title>Analytical dVCE/dt Model of High-Power Trench Gate/Field-Stop IGBT Modules Considering Dynamical Conduction Current at Near-ZCT Transient</title><title>IEEE journal of emerging and selected topics in power electronics</title><addtitle>JESTPE</addtitle><description><![CDATA[When high-power trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) modules operate at near-zero current turn-off (near-ZCT), the conventional collector-emitter voltage rise slope (<inline-formula> <tex-math notation="LaTeX">dV_{\mathrm { CE}}/dt </tex-math></inline-formula>) model does not consider the extension behavior of the space-charge region (SCR) into the FS layer. In addition, it does not account for the effect of dynamic conduction current (DCC), resulting in poor model generality. To address these issues, this article first derives an expression for the voltage at the turning point where <inline-formula> <tex-math notation="LaTeX">V_{\mathrm { CE}} </tex-math></inline-formula> exhibits a two-stage slope, occurring as the N-base region expands into the FS layer. Furthermore, the boundary conditions for <inline-formula> <tex-math notation="LaTeX">V_{\mathrm { CE}} </tex-math></inline-formula> exhibiting a two-stage slope are determined. Second, based on the proposed expression and boundary conditions, accounting for the effect of DCC on the excess carrier concentration in the N-base region, a segmented analytical model for <inline-formula> <tex-math notation="LaTeX">dV_{\mathrm { CE}}/dt </tex-math></inline-formula> is proposed. Finally, IGBT modules with various technologies and voltage ratings were experimentally tested. The results from simulations and hardware experiments validate the effectiveness and accuracy of the proposed method.]]></description><subject>Analytical models</subject><subject>Boundary conditions</subject><subject>Capacitors</subject><subject>Carrier density</subject><subject>Collector-emitter voltage rise slope (dVCE/dt)</subject><subject>dynamic conduction current (DCC)</subject><subject>Electric potential</subject><subject>Emitters</subject><subject>Germanium</subject><subject>Insulated gate bipolar transistors</subject><subject>Logic gates</subject><subject>Modules</subject><subject>near-zero current turn-off (near-ZCT)</subject><subject>Semiconductor devices</subject><subject>space-charge region (SCR)</subject><subject>Transient analysis</subject><subject>trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT)</subject><subject>Voltage</subject><issn>2168-6777</issn><issn>2168-6785</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhoMoWLS_QA8LntPuVzabY43ph1QtNHrwEjbJpN2SJnWzQfoT_NeuVpzLDC_PPDDjeTcEjwjB0fgxWaerZEQx5SPGOY-wOPMGlAjpi1AG5_9zGF56w67bYVeSBlEoB97XpFH10epC1ah8i5NxadFTW0KN2grN9Wbrr9pPMCg10BRbNFMWxlMNdemvbXtAi9l9-sP3NXQobptOl2B0s0EPx0btf60uLfvC6rZBcW-cxiJl0TMo47_HqRMrt-XSa--iUnUHw79-5b1OkzSe-8uX2SKeLH1NGLd-jnGkmCw5CTFWpAqDouAVpphJiPICB0wEAWHuPC4kg4pFuYgEIzQHrPIQ2JV3d_IeTPvRQ2ezXdsb94UuY4RQSjmXgaNuT5QGgOxg9F6ZY0awYBJLzr4B8Uptsg</recordid><startdate>20241001</startdate><enddate>20241001</enddate><creator>Li, Yue</creator><creator>Guo, Xizheng</creator><creator>Chen, Yueqing</creator><creator>Sun, Zonghui</creator><creator>You, Xiaojie</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0008-0454-2268</orcidid><orcidid>https://orcid.org/0009-0007-8042-1540</orcidid><orcidid>https://orcid.org/0000-0001-9403-2641</orcidid><orcidid>https://orcid.org/0000-0002-6365-1682</orcidid></search><sort><creationdate>20241001</creationdate><title>Analytical dVCE/dt Model of High-Power Trench Gate/Field-Stop IGBT Modules Considering Dynamical Conduction Current at Near-ZCT Transient</title><author>Li, Yue ; Guo, Xizheng ; Chen, Yueqing ; Sun, Zonghui ; You, Xiaojie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i134t-b009a38d41700a1f75cc4f02038e9bc053655132594683ef39b696312be0ab7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Analytical models</topic><topic>Boundary conditions</topic><topic>Capacitors</topic><topic>Carrier density</topic><topic>Collector-emitter voltage rise slope (dVCE/dt)</topic><topic>dynamic conduction current (DCC)</topic><topic>Electric potential</topic><topic>Emitters</topic><topic>Germanium</topic><topic>Insulated gate bipolar transistors</topic><topic>Logic gates</topic><topic>Modules</topic><topic>near-zero current turn-off (near-ZCT)</topic><topic>Semiconductor devices</topic><topic>space-charge region (SCR)</topic><topic>Transient analysis</topic><topic>trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT)</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yue</creatorcontrib><creatorcontrib>Guo, Xizheng</creatorcontrib><creatorcontrib>Chen, Yueqing</creatorcontrib><creatorcontrib>Sun, Zonghui</creatorcontrib><creatorcontrib>You, Xiaojie</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of emerging and selected topics in power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Yue</au><au>Guo, Xizheng</au><au>Chen, Yueqing</au><au>Sun, Zonghui</au><au>You, Xiaojie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analytical dVCE/dt Model of High-Power Trench Gate/Field-Stop IGBT Modules Considering Dynamical Conduction Current at Near-ZCT Transient</atitle><jtitle>IEEE journal of emerging and selected topics in power electronics</jtitle><stitle>JESTPE</stitle><date>2024-10-01</date><risdate>2024</risdate><volume>12</volume><issue>5</issue><spage>4993</spage><epage>5003</epage><pages>4993-5003</pages><issn>2168-6777</issn><eissn>2168-6785</eissn><coden>IJESN2</coden><abstract><![CDATA[When high-power trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) modules operate at near-zero current turn-off (near-ZCT), the conventional collector-emitter voltage rise slope (<inline-formula> <tex-math notation="LaTeX">dV_{\mathrm { CE}}/dt </tex-math></inline-formula>) model does not consider the extension behavior of the space-charge region (SCR) into the FS layer. In addition, it does not account for the effect of dynamic conduction current (DCC), resulting in poor model generality. To address these issues, this article first derives an expression for the voltage at the turning point where <inline-formula> <tex-math notation="LaTeX">V_{\mathrm { CE}} </tex-math></inline-formula> exhibits a two-stage slope, occurring as the N-base region expands into the FS layer. Furthermore, the boundary conditions for <inline-formula> <tex-math notation="LaTeX">V_{\mathrm { CE}} </tex-math></inline-formula> exhibiting a two-stage slope are determined. Second, based on the proposed expression and boundary conditions, accounting for the effect of DCC on the excess carrier concentration in the N-base region, a segmented analytical model for <inline-formula> <tex-math notation="LaTeX">dV_{\mathrm { CE}}/dt </tex-math></inline-formula> is proposed. Finally, IGBT modules with various technologies and voltage ratings were experimentally tested. The results from simulations and hardware experiments validate the effectiveness and accuracy of the proposed method.]]></abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/JESTPE.2024.3444906</doi><tpages>11</tpages><orcidid>https://orcid.org/0009-0008-0454-2268</orcidid><orcidid>https://orcid.org/0009-0007-8042-1540</orcidid><orcidid>https://orcid.org/0000-0001-9403-2641</orcidid><orcidid>https://orcid.org/0000-0002-6365-1682</orcidid></addata></record> |
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| subjects | Analytical models Boundary conditions Capacitors Carrier density Collector-emitter voltage rise slope (dVCE/dt) dynamic conduction current (DCC) Electric potential Emitters Germanium Insulated gate bipolar transistors Logic gates Modules near-zero current turn-off (near-ZCT) Semiconductor devices space-charge region (SCR) Transient analysis trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) Voltage |
| title | Analytical dVCE/dt Model of High-Power Trench Gate/Field-Stop IGBT Modules Considering Dynamical Conduction Current at Near-ZCT Transient |
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