Analytical dVCE/dt Model of High-Power Trench Gate/Field-Stop IGBT Modules Considering Dynamical Conduction Current at Near-ZCT Transient

When high-power trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) modules operate at near-zero current turn-off (near-ZCT), the conventional collector-emitter voltage rise slope ( dV_{\mathrm { CE}}/dt ) model does not consider the extension behavior of the space-charge region (SCR) into the FS layer. In addition, it does not account for the effect of dynamic conduction current (DCC), resulting in poor model generality. To address these issues, this article first derives an expression for the voltage at the turning point where V_{\mathrm { CE}} exhibits a two-stage slope, occurring as the N-base region expands into the FS layer. Furthermore, the boundary conditions for V_{\mathrm { CE}} exhibiting a two-stage slope are determined. Second, based on the proposed expression and boundary conditions, accounting for the effect of DCC on the excess carrier concentration in the N-base region, a segmented analytical model for dV_{\mathrm { CE}}/dt is proposed. Finally, IGBT modules with various technologies and voltage ratings were experimentally tested. The results from simulations and hardware experiments validate the effectiveness and accuracy of the proposed method.