Structural and Optical Studies on WO3/SnO2 and WO3/SnO2/SrO Composites
Doping is a widely explored technique to modify the properties of semiconducting materials. In the case of tungsten trioxide (WO 3 ), doping with elements such as SnO 2 and SrO has garnered significant attention owing to its potential impact on structural, functional, and optical characteristics. We...
Gespeichert in:
Veröffentlicht in: | Journal of electronic materials 2024-11, Vol.53 (11), p.6945-6951 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Doping is a widely explored technique to modify the properties of semiconducting materials. In the case of tungsten trioxide (WO
3
), doping with elements such as SnO
2
and SrO has garnered significant attention owing to its potential impact on structural, functional, and optical characteristics. We report on structural, functional, optical, and dielectric properties of SnO
2
/WO
3
and SrO/SnO
2
/WO
3
composites and, for comparison, WO
3
prepared via a wet chemical method. Crystallite phases were confirmed using x-ray diffraction patterns. Fourier-transform infrared spectroscopy and dielectric studies were employed to analyze the functional groups, dielectric constants, and losses of the SnO
2
/WO
3
and WO
3
/SnO
2
/SrO composites. Ultraviolet-visible spectroscopy and photoluminescence spectroscopy were used to examine the optical absorption and emission maxima, respectively. The energy bandgap was determined from the absorption spectra by using a Tauc plot. Additionally, all the prepared composites exhibited brighter and sharper narrow emissions in the photoluminescence spectra. Dielectric studies of WO
3
/SnO
2
/SrO composites revealed slightly better dielectric constants and lower dielectric losses than those of SnO
2
/WO
3
composites. Our findings suggest that the prepared composites are suitable for use in sensor and optoelectronic device applications. |
---|---|
ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-024-11412-2 |